Effect of domain nucleation on switching of ferroelectric thin films

被引：0
|
作者：
Zhang, HZ
Robert, M
Rabson, TA
机构：
[1] Rice Univ, Dept Elect & Comp Engn, Houston, TX 77251 USA
[2] Rice Univ, Dept Chem Engn, Houston, TX 77251 USA
[3] Rice Univ, Rice Quantum Inst, Houston, TX 77251 USA
[4] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77251 USA
来源：
INTEGRATED FERROELECTRICS | 2002年 / 44卷
关键词：
polarization switching; thin films; coercive field;
D O I：
10.1080/10584580215143
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Domain nucleation close to a domain wall and within an unswitched domain of a ferroelectric thin film is analyzed theoretically in terms of the local field, from which a model of ferroelectric polarization switching is developed. The coercive field is calculated as a function of film thickness, and the prediction is found to be in good agreement with experiments on PbZrxTi1-xO3 thin films.
引用
收藏
页码：125 / 134
页数：10
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