Thin film aluminum-gold interface interactions

被引:27
作者
Xu, C. [1 ]
Sritharan, T. [1 ]
Mhaisalkar, S. G. [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
关键词
thin films; secondary ion mass spectroscopy (SIMS); intermetallic compounds;
D O I
10.1016/j.scriptamat.2006.09.038
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin film diffusion couples of 1 mu m Au with 0.3 mu m and 1 mu m Al were annealed at different temperatures and for different times and the resulting interface reactions were tracked by X-ray diffraction and electron microscopy. The phase formation sequence was identified and the interface microstructure was shown to consist of layers of the different phases. Interface tracking by secondary ion mass spectroscopy depth profiling showed that Au is the predominant diffusant in this system. Intermetallic thickness measurements were made and the activation energy calculated. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:549 / 552
页数:4
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