Development of ''kink'' in the output I-V characteristics of pseudomorphic HEMT's after hot-electron accelerated testing

被引：7

作者：

Meneghesso, G ^{[1
]}

Cogliati, B ^{[1
]}

Donzelli, G ^{[1
]}

Sala, D ^{[1
]}

Zanoni, E ^{[1
]}

机构：

[1] ALCATEL TELETTRA,VIMERCATE,MILANO,ITALY

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00138-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large decreases in the drain current in the linear and low V-ds region followed by a ''kink'' in the output I-d-V-ds characteristics have been found after hot electron stress test in AlGaAs/InGaAs/GaAs power pseudomorphic HEMT's. Decrease in the transconductance measured in linear region, increase in the drain parasitic resistance and trasconductance frequency dispersion have also been observed and attributed to the generation of electron traps in the gate-to-drain access region. (C) 1997 Elsevier Science Ltd.

引用

页码：1679 / 1682

页数：4

共 8 条

[1] LOW-FIELD LOW-FREQUENCY DISPERSION OF TRANSCONDUCTANCE IN GAAS-MESFETS WITH IMPLICATIONS FOR OTHER RATE-DEPENDENT ANOMALIES [J].