Implications of polishing techniques in quantitative x-ray microanalysis

被引:12
作者
Rémond, G
Nockolds, C
Phillips, M
Roques-Carmes, C
机构
[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
[2] Ecole Natl Mecan & Microtech, Lab Microanal Surface, Besancon, France
[3] Univ Sydney, Electron Microscope Unit, Sydney, NSW 2006, Australia
[4] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW 2007, Australia
关键词
abrasive wear; bound abrasives; chemical-mechanical polishing; loose abrasives; polishing; surface and subsurface damage; x-ray microanalysis;
D O I
10.6028/jres.107.052
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Specimen preparation using abrasives results in surface and subsurface mechanical (stresses, strains), geometrical (roughness), chemical (contaminants, reaction products) and physical modifications (structure, texture, lattice defects). The mechanisms involved in polishing with abrasives are presented to illustrate the effects of surface topography, surface and subsurface composition and induced lattice defects on the accuracy of quantitative x-ray microanalysis of mineral materials with the electron probe microanalyzer (EPMLambda).
引用
收藏
页码:639 / 662
页数:24
相关论文
共 34 条
[1]   ELASTIC DEFORMATION AND THE LAWS OF FRICTION [J].
ARCHARD, JF .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 243 (1233) :190-205
[2]  
BASTIN GF, 1991, ELECTRON PROBE QUANTITATION, P163
[3]  
Bowden FP, 2001, Friction and Lubrication of Solids
[4]  
BOYARSKYA YS, PHYS STAT SOL A, V142, P3543
[5]   The effect of pad wear on the chemical mechanical polishing of silicon wafers [J].
Byrne, G ;
Mullany, B ;
Young, P .
CIRP ANNALS 1999 - MANUFACTURING TECHNOLOGY, 1999, :143-146
[6]  
Cazaux J, 1996, X-RAY SPECTROM, V25, P265, DOI 10.1002/(SICI)1097-4539(199611)25:6<265::AID-XRS172>3.0.CO
[7]  
2-3
[8]  
CZICHOS H, 1979, METTALURGICAL ASPECT, P9
[9]   Time and temperature dependence of the scratch properties of poly(methylmethacrylate) surfaces [J].
Gauthier, C ;
Schirrer, R .
JOURNAL OF MATERIALS SCIENCE, 2000, 35 (09) :2121-2130
[10]  
Gauvin R, 2000, INST PHYS CONF SER, P285