Epitaxial NiO (100) and NiO (111) films grown by atomic layer deposition

被引：40

作者：

Lindahl, E. ^{[1
]}

Lu, J. ^{[2
]}

Ottosson, M. ^{[1
]}

Carlsson, J. -O. ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Lab, Dept Chem Mat, SE-75121 Uppsala, Sweden

[2] Uppsala Univ, Angstrom Lab, Angstrom Microstruct Lab, SE-75121 Uppsala, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 16期

基金：

瑞典研究理事会;

关键词：

Atomic layer deposition; X-ray diffraction; Transmission electron microscopy; NiO (100); NiO (111); Crystallite size; PULSED-LASER DEPOSITION; THIN-FILMS; NICKEL-OXIDE; PRECURSORS; REDUCTION; WATER;

D O I：

10.1016/j.jcrysgro.2009.06.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates at temperatures as low as 200 degrees C by using bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as precursors. The films grown on the MgO (1 0 0) substrate show the expected cube on cube growth while the NiO (1 1 1) films grow with a twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface. The films had columnar microstructures on both substrate types. The single grains were running throughout the whole film thickness and were significantly smaller in the direction parallel to the surface. Thin NiO (1 1 1) films can be grown with high crystal quality with a FWHM of 0.02-0.05 degrees in the rocking curve measurements. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：4082 / 4088

页数：7

共 21 条

[1]

BOGATSKII DP, 1959, J GEN CHEM USSR, V29, P1358

[2] Atomic layer deposition of nickel by the reduction of preformed nickel oxide [J].

Chae, J ;

Park, HS ;

Kang, SW .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (06) :C64-C66

[3] Ferromagnetic nanotubes by atomic layer deposition in anodic alumina membranes [J].

Daub, M. ;

Knez, M. ;

Goesele, U. ;

Nielsch, K. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)

[4] CHEMISORPTION OF CHROMIUM ACETYLACETONATE ON POROUS HIGH-SURFACE-AREA SILICA [J].

HAUKKA, S ;

LAKOMAA, EL ;

SUNTOLA, T .

APPLIED SURFACE SCIENCE, 1994, 75 :220-227

[5] SURFACE COVERAGE OF ALE PRECURSORS ON OXIDES [J].

HAUKKA, S ;

LAKOMAA, EL ;

SUNTOLA, T .

APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) :548-552

[6] Electrode dependence and film resistivity electric-field-induced resistance-switching in epitaxial NiO films effect in the phenomena [J].

Ishiharaa, T. ;

Ohkubo, I. ;

Tsubouchi, K. ;

Kumigashira, H. ;

Joshi, U. S. ;

Matsumoto, Y. ;

Koinuma, H. ;

Oshima, M. .

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 148 (1-3) :40-42

[7] Room-temperature epitaxial growth of NiO(111) thin films by pulsed laser deposition [J].

Kakehi, Y ;

Nakao, S ;

Satoh, K ;

Kusaka, T .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :591-595

[8] Resistive memory switching in epitaxially grown NiO [J].

Lee, S. R. ;

Char, K. ;

Kim, D. C. ;

Jung, R. ;

Seo, S. ;

Li, X. S. ;

Park, G. -S. ;

Yoo, I. K. .

APPLIED PHYSICS LETTERS, 2007, 91 (20)

[9] Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination [J].

Lindahl, Erik ;

Ottosson, Mikael ;

Carlsson, Jan-Otto .

CHEMICAL VAPOR DEPOSITION, 2009, 15 (7-9) :186-191

[10] Fabrication of ferromagnetic Ni epitaxial thin film by way of hydrogen reduction of NiO [J].

Matsuda, Akifumi ;

Akiba, Shusaku ;

Kasahara, Masayasu ;

Watanabe, Takahiro ;

Akita, Yasuyuki ;

Kitamoto, Yoshitaka ;

Tojo, Takeo ;

Kawaji, Hitoshi ;

Atake, Tooru ;

Koyama, Kouji ;

Yoshimoto, Mamoru .

THIN SOLID FILMS, 2008, 516 (12) :3873-3876

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