Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas

被引：3

作者：

Islam, Md. Shofiqul ^{[1
]}

Mehedi, Ibrahim Mustafa ^{[1
]}

机构：

[1] King Abdulaziz Univ, Fac Engn, Dept Elect & Comp Engn, POB 80204, Jeddah 21589, Saudi Arabia

来源：

JOURNAL OF CRYSTAL GROWTH | 2016年 / 440卷

关键词：

In-situ doping; Vapor-liquid-solid (VLS) growth; Phosphorus; Boron; Doped Si microneedles; TEMPERATURE-DEPENDENCE; SI-MICROPROBE; ARRAYS; RESISTIVITY; FABRICATION; DEPOSITION; MECHANISM; DIBORANE; SI1-XGEX; MOBILITY;

D O I：

10.1016/j.jcrysgro.2016.01.034

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work was carried out to investigate the comparative effects of phosphorus and boron doing in vapor-liquid-solid (VLS) growth. Doped Si microneedles were grown by VLS mechanism at the temperature of 700 degrees C or less using Au as the catalyst. VLS growth using in-situ doping with the mixed gas of Si2H6 and PH3 produced phosphorus doped n-Si microneedles at Au dot sites, whereas, the mixed gas of Si2H6 and B2H6 produced boron doped p-Si microneedles. The variation of growth rate, diameter, resistivity, impurity concentration and carrier (electron, hole) mobility of these n-Si and p-Si microneeedles were investigated and compared with the variation of dopant gas (PH3 or B2H6) flow, with a fixed flow of Si gas (Si2H6). This comparative study shall be helpful while fabricating devices by growing n-Si and p-Si microneedles one above another by multistep (2-step or 3-step) VLS growth. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：55 / 61

页数：7

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