Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

被引：8
作者：
Li, CB
Cheng, BW
Mao, RW
Zuo, YH
Shi, WH
Huang, CJ
Luo, LP
Yu, JZ
Wang, QM
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
来源：
THIN SOLID FILMS | 2004年 / 467卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
Ge islands; photoluminescence; cavity; SOI;
D O I：
10.1016/j.tsf.2004.04.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Novel room temperature photoluminescence (PL) of the Ge/Si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface has a strong effect on the PL emission. The peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：197 / 200
页数：4
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