Colloquium: Physical properties of group-IV monochalcogenide monolayers

被引:128
作者
Barraza-Lopez, Salvador [1 ]
Fregoso, Benjamin M. [2 ]
Villanova, John W. [1 ]
Parkin, Stuart S. P. [3 ]
Chang, Kai [4 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Kent State Univ, Dept Phys, Kent, OH 44242 USA
[3] Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany
[4] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
STRONG 2ND-HARMONIC GENERATION; ELECTRICAL-PROPERTIES; FERROELECTRIC BATIO3; VALLEY POLARIZATION; BULK; MOS2; PIEZOELECTRICITY; INPLANE; TEMPERATURE; NANOSHEETS;
D O I
10.1103/RevModPhys.93.011001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers is surveyed. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally driven two-dimensional structural transformations. Additionally, these 2D materials display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry (such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies) is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in nonvolatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D material toolbox.
引用
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页数:20
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