Sheet Resistance Reduction of MoS2 Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

被引：12

作者：

Hamada, Takuya ^{[1
]}

Tomiya, Shigetaka ^{[2
]}

Tatsumi, Tetsuya ^{[2
]}

Hamada, Masaya ^{[1
]}

Horiguchi, Taiga ^{[1
]}

Kakushima, Kuniyuki ^{[3
]}

Tsutsui, Kazuo ^{[4
]}

Wakabayashi, Hitoshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Sch Engn, Dept Elect & Elect Engn, Suzukakedai Campus, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Res Inst Earth Inclus Sensing, Suzukakedai Campus, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 1528550, Japan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷

基金：

日本科学技术振兴机构;

关键词：

Activation annealing; chlorine plasma; molybdenum disulfide (MoS2); radio-frequency magnetron sputtering; transition metal dichalcogenide (TMDC); ATOMIC-LAYER MOS2; PHOTOLUMINESCENCE; STRAIN;

D O I：

10.1109/JEDS.2021.3050801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sheet resistance (R-sheet) reduction of a-few-layered molybdenum disulfide (MoS2) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl-2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the R-sheet in the MoS2 film with the Cl-2 plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS2 film.

引用

页码：278 / 285

页数：8

共 49 条

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