The evolution of group III nitride semiconductors - Seeking blue light emission

被引：9

作者：

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 74卷 / 1-3期

基金：

日本学术振兴会;

关键词：

group III nitrides; organometallic vapor phase epitaxy; low-temperature buffer; conductivity control; light emitting diode; laser;

D O I：

10.1016/S0921-5107(99)00543-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Renaissance and progress in crystal growth and achievement of conductivity control of group III nitride semiconductors in the past quarter century are reviewed as the groundwork for recently developed high-performance blue and green light emitting diodes, laser diodes and transistors based on nitrides. Quite recent advance in crystal growth is also reported. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：101 / 106

页数：6

共 20 条

[1]

Akasaki I, 1998, MATER RES SOC SYMP P, V482, P3

[2]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[3] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].