Defect generation and reliability of ultra-thin SiO2 at low voltage

被引：0

作者：

Stathis, JH ^{[1
]}

DiMaria, DJ ^{[1
]}

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4 | 2000年 / 2000卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrons tunneling through the gate oxide generate defects until a critical density is reached and the oxide breaks down. The critical defect density is explained by the formation of a percolation path of defects across the oxide. The rate of defect generation decreases exponentially with supply voltage, but the tunnel current also increases exponentially with decreasing oxide thickness, leading to a diminishing margin for reliability as device dimensions are scaled.

引用

页码：33 / 44

页数：4

共 50 条

[41] Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
Seguini, G.
Curi, J. Llamoja
Spiga, S.
Tallarida, G.
Wiemer, C.
Perego, M.
NANOTECHNOLOGY, 2014, 25 (49)
[42] Defect generation in ultra-thin oxide over large fluence range
Heh, D
Vogel, EM
Bernstein, JB
2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2002, : 9 - 13
[43] Structural and electrical characterization of ultra-thin SiO2 films prepared by catalytic oxidation method
Izumi, Akira
Kudo, Manabu
Matsumura, Hideki
Solid State Phenomena, 2000, 76-77 : 157 - 160
[44] KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .1. EXPERIMENT
VANDERME.YJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 530 - +
[45] Ultra-thin SiO2 on SiVIII.: Accuracy of method, linearity and attenuation lengths for XPS
Kim, Kyung Joong
Seah, M. P.
SURFACE AND INTERFACE ANALYSIS, 2007, 39 (06) : 512 - 518
[46] Ultra-thin SiO2 film studies:: index, thickness, roughness and the initial oxidation regime
Irene, EA
SOLID-STATE ELECTRONICS, 2001, 45 (08) : 1207 - 1217
[47] Structural and electrical characterization of ultra-thin SiO2 films prepared by catalytic oxidation method
Izumi, A
Kudo, M
Matsumura, H
ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000, 2001, 76-77 : 157 - 160
[48] Local electrical characteristics of ultra-thin SiO2 films formed on Si(001) surfaces
Ikeda, H
Kurumado, N
Ohmori, K
Sakashita, M
Sakai, A
Zaima, S
Yasuda, Y
SURFACE SCIENCE, 2001, 493 (1-3) : 653 - 658
[49] Electron transport through broken down ultra-thin SiO2 layers in MOS devices
Miranda, E
Suñé, J
MICROELECTRONICS RELIABILITY, 2004, 44 (01) : 1 - 23
[50] Microscopic observation of X-ray irradiation damage in ultra-thin SiO2 films
Ohmori, K
Goto, T
Ikeda, H
Sakai, A
Zaima, S
Yasuda, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B): : 2823 - 2826

← 1 2 3 4 5 →