Magnetic Field Sensors Based on Giant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing

被引:192
作者
Reig, Candid [1 ]
Cubells-Beltran, Maria-Dolores [1 ]
Ramirez Munoz, Diego [1 ]
机构
[1] Univ Valencia, Dept Elect Engn, E-46100 Burjassot, Spain
关键词
physical sensors; magnetic field sensors; giant magnetoresistance; current sensors; CRYSTAL-GROWTH; ENHANCEMENT; DESIGN; SPACE;
D O I
10.3390/s91007919
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications.
引用
收藏
页码:7919 / 7942
页数:24
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