Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes

被引:93
作者
Jindal, Vibhu [1 ]
Shahedipour-Sandvik, Fatemeh [1 ]
机构
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
关键词
LEVEL-SET METHOD; VECTOR THERMODYNAMICS; ANISOTROPIC SURFACES; GROWTH; PLANE;
D O I
10.1063/1.3253575
中图分类号
O59 [应用物理学];
学科分类号
摘要
A wide variety of nanostructure shapes have been observed for GaN under different growth conditions. These shapes include but are not limited to hexagonal pyramid, prismatic, triangular cross-section nanowires, and arrow-headed shapes. Using Wulff's plot and kinetic Wulff's plot for GaN under thermodynamic equilibrium and under various kinetic conditions, we present a model to theoretically predict and explain these faceted nanostructure shapes. Legendre transformation on Wulff's plot and kinetic Wulff's plot has been extensively utilized to obtain the faceted equilibrium shapes in equilibrium. In addition, equilibrium and nonequilibrium faceted geometry of nanostructures have also been predicted by numerical simulations using level set methods and the proposed kinetic Wulff's plot. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253575]
引用
收藏
页数:7
相关论文
共 17 条
  • [1] Selective MOVPE of GaN and AlxGa1-xN with smooth vertical facets
    Akasaka, T
    Kobayashi, Y
    Ando, S
    Kobayashi, N
    Kumagai, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 72 - 77
  • [2] Crystal shapes and phase equilibria: A common mathematical basis
    Cahn, JW
    Carter, WC
    [J]. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1996, 27 (06): : 1431 - 1440
  • [3] VECTOR THERMODYNAMICS FOR ANISOTROPIC SURFACES .2. CURVED AND FACETED SURFACES
    CAHN, JW
    HOFFMAN, DW
    [J]. ACTA METALLURGICA, 1974, 22 (10): : 1205 - 1214
  • [4] Systematic prediction of kinetically limited crystal growth morphologies
    Du, DX
    Srolovitz, DJ
    Coltrin, ME
    Mitchell, CC
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (15)
  • [5] VECTOR THERMODYNAMICS FOR ANISOTROPIC SURFACES .1. FUNDAMENTALS AND APPLICATION TO PLANE SURFACE JUNCTIONS
    HOFFMAN, DW
    CAHN, JW
    [J]. SURFACE SCIENCE, 1972, 31 (01) : 368 - &
  • [6] Selective area heteroepitaxy of low dimensional a-plane and c-plane InGaN nanostructures using pulsed MOCVD
    Jindal, V.
    Tripathi, N.
    Tungare, M.
    Paschos, O.
    Haldar, P.
    Shahedipour-Sandvik, F.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1709 - 1711
  • [7] Epitaxial growth of aligned GaN nanowires and nanobridges
    Kim, Kyungkon
    Henry, Tania
    Cui, George
    Han, Jung
    Song, Yoon-Kyu
    Nurmikko, Arto V.
    Tang, Hong
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (06): : 1810 - 1814
  • [8] Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy
    Miyake, H
    Motogaito, A
    Hiramatsu, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB): : L1000 - L1002
  • [9] Theory of GaN(10(1)over-bar-0) and (11(2)over-bar-0) surfaces
    Northrup, JE
    Neugebauer, J
    [J]. PHYSICAL REVIEW B, 1996, 53 (16): : 10477 - 10480
  • [10] OSHER S, 1997, ASIAN J MATH, V1, P560