Photo-electrochemical impedance spectroscopy analysis of hydrothermally synthesized β-In2S3 thin film photo-anodes

被引：16
作者：
Jrad, Fatma [1 ,2 ]
Ben Naceur, Jamila [1 ]
Ouertani, Rachid [1 ]
Chtourou, Radhouane [1 ]
机构：
[1] Res & Technol Ctr Energy, Lab Nanomat & Renewable Energy Syst, Borj Cedria Sci & Technol Pk,BP 95, Hammam Lif 2050, Tunisia
[2] Univ Tunis El Manar, Fac Sci Tunis, Tunis, Tunisia
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2019年 / 114卷
关键词：
beta-In2S3; Hydrothermal method; Thin film; Photo-anode; Photo-electrochemical impedance spectroscopy; Mott-Schottky; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; IN2S3; NANOCRYSTALS; NANOSHEETS;
D O I：
10.1016/j.physe.2019.113585
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, indium sulfide (beta-In2S3) thin films were synthesized on fluorine doped fin oxide (FTO) coated glass substrates by hydrothermal reactions. The hydrothermal reaction time (HRT) was varied from 4 to 16 h and the synthesis temperature was maintained at 160 degrees C. The morphological, physical and electrochemical properties of the processed In2S3 films show a clear HRT dependency. XRD analysis indicates that both crystallinity and crystal size increase as HRT increases. UV-Vis absorbance spectra analysis reveals that the HRT influence greatly the In2S3 optical properties with an estimated band gap varying from 3.6 to 2.1 eV. We present as well, the influence of the HRT on the photo-electrochemical performances of In2S3 based photo-anodes investigated with electrochemical impedance spectroscopy (EIS). In2S3 photo-anodes with a photocurrent as high as 1 mA cm(-2) at 0.5 V were prepared for a HRT equal to 12 h. These experimental findings promote the hydrothermal method as a simple, low cost and low temperature route allowing the preparation of beta-In2S3 thin films on FTO glass suitable for photo-electrochemical applications.
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页数：10
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