Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

被引：4

作者：

Lee, Tae Hwan ^{[1
,2
]}

Koo, Hyun Cheol ^{[1
]}

Kim, Kyung Ho ^{[1
]}

Kim, Hyung-Jun ^{[1
]}

Chang, Joon Yeon ^{[1
]}

Han, Suk-Hee ^{[1
]}

Hong, Jinki ^{[3
]}

Lim, Sang Ho ^{[2
]}

机构：

[1] Korea Inst Sci & Technol, Ctr Spintron Res, Seoul 136791, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[3] Korea Univ, Dept Phys, Yeongi Kun 339700, Chungnam, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2009年 / 321卷 / 22期

关键词：

Spin injection; Spin injection efficiency; Interface resistance; Schottky-tunnel-barrier; SEMICONDUCTOR; TRANSPORT; DIFFUSION;

D O I：

10.1016/j.jmmm.2009.07.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (Delta R/R-0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (eta) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T = 1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3795 / 3798

页数：4

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