Conductivity Modulated On-axis 4H-SiC 10+kV PiN Diodes

被引：0

作者：

Salemi, Arash ^{[1
]}

Elahipanah, Hossein ^{[1
]}

Buono, Benedetto ^{[2
]}

Hallen, Anders ^{[1
]}

Hassan, Jawad Ul ^{[3
]}

Bergman, Peder ^{[3
]}

Malm, Gunnar ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol Integrated Devices & Circu, S-16440 Kista, Sweden

[2] Fairchild Semicond, S-16440 Kista, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

On-axis; 4H-SiC; PiN diode; ultrahigh-voltage; lifetime enhancement; V-F; on-resistance; OCVD; breakdown voltage; bipolar degradation-free;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Degradation-free ultrahigh-voltage (> 10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V-F = 3.3 V at 100 A/cm(2)) and low differential on-resistance (R-ON = 3.4 m Omega.cm(2)) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 degrees C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (tau(P)) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The tau(P) is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.

引用

页码：269 / 272

页数：4

共 15 条

[1] Formation of carbon vacancy in 4H silicon carbide during high-temperature processing [J].

Ayedh, H. M. ;

Bobal, V. ;

Nipoti, R. ;

Hallen, A. ;

Svensson, B. G. .

JOURNAL OF APPLIED PHYSICS, 2014, 115 (01)

[2]

Baliga B. J., 2010, Fundamentals of Power Semiconductor Devices

[3]

Buono B., 2012, THESIS

[4] Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation [J].

Hiyoshi, Toru ;

Kimoto, Tsunenobu .

APPLIED PHYSICS EXPRESS, 2009, 2 (04) :0411011-0411013

[5] Progress on the development of 10 kV 4H-SiC PiN diodes for high Current/High voltage power handling applications [J].

Hull, Brett A. ;

Sumakeri, Joseph J. ;

Das, Mrinal K. ;

Richmond, James T. ;

Palmour, John .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :895-+

[6] High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime [J].

Ivanov, Pavel A. ;

Levinshtein, Michael E. ;

Palmour, John W. ;

Das, Mrinal K. ;

Hull, Brett A. .

SOLID-STATE ELECTRONICS, 2006, 50 (7-8) :1368-1370

[7] Ion implantation range distributions in silicon carbide [J].

Janson, MS ;

Linnarsson, MK ;

Hallén, AA ;

Svensson, BG .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :8903-8909

[8] Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures [J].

Niwa, Hiroki ;

Feng, Gan ;

Suda, Jun ;

Kimoto, Tsunenobu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (10) :2748-2752

[9]

Östling M, 2010, INT EL DEVICES MEET

[10] Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC [J].

Salemi, Arash ;

Buono, Benedetto ;

Hallen, Anders ;

Ul Hassan, Jawad ;

Bergman, Peder ;

Zetterling, Carl Mikael ;

Ostling, Mikael .

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :836-+

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