Porous silicon based β-FeSi2 and photoluminescence

被引：10

作者：

Chen, H. T. ^{[1
,2
,3
,4
]}

Wu, X. L. ^{[1
,2
,3
]}

Zhang, Y. Y. ^{[1
,2
,3
]}

Su, W. N. ^{[1
,2
,3
]}

机构：

[1] National Laboratory of Solid State Microstructure, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[4] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 97卷 / 03期

关键词：

OPTICAL-ABSORPTION; LUMINESCENCE; TEMPERATURE; DISILICIDE; GROWTH;

D O I：

10.1007/s00339-009-5310-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly-pure iron powder was covered on porous silicon for fabricating semiconducting beta-FeSi2 structures. X-ray diffraction and Raman scattering results confirm the formation of pure-phase beta-FeSi2 after high-temperature annealing at 1100A degrees C and then long-time persistence at 900A degrees C. Scanning electron microscope observations reveal that large-size (>mu m) beta-FeSi2 grains mainly form in the pores of porous silicon and some nanocrystals grow on local surfaces. The temperature-dependent photoluminescence spectra disclose that the observed similar to 1.54 mu m emission arises from free exciton recombination, which is confirmed via the activation energy (0.25 eV) measurement. Our method provides a way to synthesize single-phase beta-FeSi2 materials.

引用

页码：725 / 728

页数：4

共 26 条

[1] 1.54 μm photoluminescence from β-FeSi2 as-deposited film [J].