Developments of SiC devices and SiC inverters aimed at electric power applications

被引：1

作者：

Sugawara, Yoshitaka ^{[1
]}

机构：

[1] SiC Power Elect Network, 2-19-10 Mikanohara Cho, Hitachi, Ibaraki 3160026, Japan

来源：

ELECTRICAL ENGINEERING IN JAPAN | 2019年 / 208卷 / 3-4期

关键词：

diode; high heat resistive resin; inverter; MOSFET; SiC; thyristor;

D O I：

10.1002/eej.23213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The developments of SiC power devices has been proceeded remarkably since 1990. SiC power devices have been payed attentions as one of the candidate power devices for next HVDC transmissions and its R&Ds have been started in the KANSAI electric power company since 1995. In this paper, a series of R&Ds for the SiC devices and SiC inverters performed in the company are presented from the historical viewpoints.

引用

页码：3 / 9

页数：7

共 21 条

[1] 1.1 kV 4H-SiC power UMOSFET's [J].

Agarwal, AK ;

Casady, JB ;

Rowland, LB ;

Valek, WF ;

White, MH ;

Brandt, CD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) :586-588

[2]

Aggeler D, THESIS

[3] High temperature static and dynamic characteristics of 3.7kV high voltage 4H-SiC JBS [J].

Asano, K ;

Hayashi, T ;

Saito, R ;

Sugawara, Y .

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :97-100

[4]

Hara K, 1996, 5 C SIC REL WID GAP, P15

[5] The Future Renewable Electric Energy Delivery and Management (FREEDM) System: The Energy Internet [J].

Huang, Alex Q. ;

Crow, Mariesa L. ;

Heydt, Gerald Thomas ;

Zheng, Jim P. ;

Dale, Steiner J. .

PROCEEDINGS OF THE IEEE, 2011, 99 (01) :133-148

[6]

ITOH A, 1995, ISPSD '95 - PROCEEDINGS OF THE 7TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P101, DOI 10.1109/ISPSD.1995.515017

[7]

Kimoto T, 2014, P M R D SIC POW EL

[8]

Kordina O, 1995, APPL PHYS LETT, V67, P11

[9]

Sugawara Y, 2008, INT SYM POW SEMICOND, P267

[10] 180kVA three phase SiCGT inverter utilizing novel VF degradation reduction phenomena for SiC devices [J].

Sugawara, Y. ;

Miyanagi, Y. ;

Nakayama, K. ;

Asano, K. ;

Ogata, S. ;

Okada, S. ;

Izumi, T. ;

Tanaka, A. .

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 2007, :273-+

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