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High-isolation CPW MEMS shunt switches - Part 2: Design
被引:104
作者:
Muldavin, JB
[1
]
Rebeiz, GM
[1
]
机构:
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Radiat Lab, Ann Arbor, MI 48109 USA
关键词:
low loss;
MEMS;
micromachining;
microwave;
millimeter wave;
switches;
D O I:
10.1109/22.904744
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper, the second of two parts, the equivalent RLC model of the shunt switch is used in the design of tuned two- and four-bridge "cross" switches from 10 to 40 GHz, The cross switch attained an insertion loss of less than 0.3-0.6 dB, a return loss below -20 dB from 22 to 38 GHz in the up state, and a down-state isolation of 45-50 dB with only 1.5 pF of down-state capacitance (Cd) Also, an X-band microelectromechanical system (MEMS) switch with an insertion loss of less than 0.2 dB and an isolation of 35 dB is presented. This is done by inductively tuning the LC series resonance of the shunt switch. The MEMS bridge height is 1.5-2.5 mu m, resulting in a pull-down voltage of 15-25 V. Application areas are in low-loss high-isolation communication and radar switches.
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页码:1053 / 1056
页数:4
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