Hybrid III-V diamond photonic platform for quantum nodes based on neutral silicon vacancy centers in diamond

被引：12

作者：

Huang, Ding ^{[1
]}

Abulnaga, Alex ^{[1
]}

Welinski, Sacha ^{[1
]}

Raha, Mouktik ^{[1
]}

Thompson, Jeff D. ^{[1
]}

Leon, Nathalie P. De ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

OPTICS EXPRESS | 2021年 / 29卷 / 06期

基金：

美国国家科学基金会;

关键词：

FREQUENCY-CONVERSION; WAVELENGTH EXCHANGE; TRANSLATION; CAVITY; SCALE; GAAS; ENTANGLEMENT; GENERATION; EFFICIENT; CHI((2));

D O I：

10.1364/OE.418081

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers can be highly sensitive to their environment, and their properties degrade in nanofabricated structures. Here, we describe a heterogeneously integrated, on-chip, III-V diamond platform designed for neutral silicon vacancy (SiV0) centers in diamond that circumvents the need for etching the diamond substrate. Through evanescent coupling to SiV0 centers near the surface of diamond, the platform will enable Purcell enhancement of SiV0 emission and efficient frequency conversion to the telecommunication C-band. The proposed structures can be realized with readily available fabrication techniques. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：9174 / 9189

页数：16

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