An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure

被引：26

作者：

Ohki, Toshihiro ^{[1
,2
]}

Kikkawa, Toshihide ^{[1
,2
]}

Kanamura, Masahito ^{[1
,2
]}

Imanishi, Kenji ^{[1
,2
]}

Makiyama, Kozo ^{[1
,2
]}

Okamoto, Naoya ^{[1
,2
]}

Joshin, Kazukiyo ^{[1
,2
]}

Hara, Naoki ^{[2
]}

机构：

[1] Fujitsu Ltd, 10-1 Morinosato Wakamiya, Kanagawa 2430197, Japan

[2] Fujitsu Lab Ltd, Kanagawa 2430197, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6 | 2009年 / 6卷 / 06期

关键词：

THRESHOLD-VOLTAGE; GAN MOSFETS; HETEROSTRUCTURE; TRANSISTORS; FET;

D O I：

10.1002/pssc.200881533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel piezoelectric-induced cap structure in an AlGaN/GaN high electron mobility transistor (HEMT) was developed for enhancement-mode (E-mode) operation with high maximum drain current density high breakdown voltage (BVgd) and small current collapse. Our developed cap structure consists of a thin GaN/AlN/GaN triple-layer, which reduces the sheet resistance (Rh) due to conduction band bending. The threshold voltage (V-th) is +0.25 V with a high I-dmax of 520 mA/mm, a high BVgd of 336 V and small current collapse by using the developed cap structure and a gate recess technique. The single-chip AlGaN/GaN E-mode HEMT amplifier achieved a high output power of 126 W at 2.5 GHz with improved distortion characteristics. This is the first report of an AlGaN/GaN E-mode HEMT with an Output power of over 100 W. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1365 / +

页数：2

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