Sub-gap excitation effects in As2S3 glass

被引：31
|
作者：
Tanaka, K [1 ]
机构：
[1] Hokkaido Univ, Fac Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷
关键词：
D O I：
10.1016/S0022-3093(99)00861-3
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The mechanism of photoexpansion (PE) has been studied in conjunction with photoconduction (PC) and photoluminescence (PL) characteristics for As2S3 glass. In spectrum-intensity dependence measured at room temperature the PE resembles the PC, while the PE shows a similar temperature dependence to that of the FL. These features are discussed in relation to the band-tail structure in chalcogenide glasses and we suggest that electron-hole pairs are responsible for the PE. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：889 / 893
页数：5
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