Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy

被引：25
作者：
Ge, Xiaotian [1 ]
Wang, Dengkui [1 ]
Gao, Xian [1 ]
Fang, Xuan [1 ]
Niu, Shouzhu [1 ]
Gao, Hongyi [1 ]
Tang, Jilong [1 ]
Wang, Xiaohua [1 ]
Wei, Zhipeng [1 ]
Chen, Rui [2 ]
机构：
[1] Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Peoples R China
[2] South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2017年 / 11卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaAsSb; AlGaAs; molecular beam epitaxy; photoluminescence; localized states; EXCITON LOCALIZATION; PHOTOLUMINESCENCE; SEMICONDUCTORS; DEPENDENCE; LASERS; CHARGE;
D O I：
10.1002/pssr.201700001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb-based multiple quantum wells (MQWs) are crucial. The temperature-and excitation power-dependent photoluminescence (PL) spectra of the GaAs0.92Sb0.08/Al(0.2)Ga(0.8)A s MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low-energy shoulder was confirmed to be localized states emission (LE) and the high-energy side peak was confirmed to be free-carrier emission by its temperature-dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb-based MQWs in infrared semiconductor lasers.
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页数：5
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