Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

被引:361
作者
Maur, Matthias Auf Der [1 ]
Pecchia, Alessandro [2 ]
Penazzi, Gabriele [3 ]
Rodrigues, Walter [1 ]
Di Carlo, Aldo [1 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[2] CNR ISMN, I-00017 Rome, Italy
[3] Univ Bremen, Bremen Ctr Computat Mat Sci, D-28359 Bremen, Germany
关键词
QUANTUM; ENERGY; MODELS;
D O I
10.1103/PhysRevLett.116.027401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c-plane InGaN/GaN-based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.
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页数:5
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