Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

被引：144

作者：

Donetsky, Dmitry ^{[1
]}

Svensson, Stefan P. ^{[2
]}

Vorobjev, Leonid E. ^{[3
]}

Belenky, Gregory ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

[3] St Petersburg State Polytech Univ, Dept Semicond Phys & Nanoelect, St Petersburg 195251, Russia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

carrier density; carrier lifetime; excited states; gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor superlattices; RECOMBINATION;

D O I：

10.1063/1.3267103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5x10(15) cm(-3). The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.

引用

页数：3

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