Degradation kinetics of semiconductor structures affected by high-power microwave pulses

被引：0
|
作者：
Stryukov, BA
Lenchuk, SI
机构：
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2000年 / 45卷 / 07期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model is proposed for the degradation of semiconductor structures (SSs) affected by high-power microwave pulses (HPMPs). This model is used for investigating the influence of the current instability on the degradation kinetics. It is demonstrated that single pulses may cause only catastrophic failures, while pulse sequences may cause both catastrophic failures and structure blindness.
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页码：803 / 807
页数：5
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