Transition of hydrated oxide layer for aluminum electrolytic capacitors

被引：17

作者：

Chi, Choong-Soo

Jeong, Yongsoo

Ahn, Hong-Joo

Lee, Jong-Ho

Kim, Jung-Gu

Lee, Jun-Hee

Jang, Kyung-Wook

Oh, Han-Jun ^{[1
]}

机构：

[1] Hanseo Univ, Dept Mat Sci, Seosan 352820, South Korea

[2] Kookmin Univ, Seoul 136702, South Korea

[3] Korea Inst Machinery & Mat, Chang Won 641010, South Korea

[4] Korea Atom Energy Res Inst, Taejon 305600, South Korea

[5] Hanseo Univ, Dept Chem, Seosan 352820, South Korea

[6] Sungkyunkwan Univ, Dept Met Engn, Suwon 440746, South Korea

[7] Dong A Univ, Dept Mat Sci & Engn, Pusan 604714, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2007年 / 449卷

关键词：

hydrous layer; anodization; dielectric layer; RBS; boehmite;

D O I：

10.1016/j.msea.2006.02.317

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：314 / 317

页数：4

共 10 条

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