Donor-Acceptor Conjugated Polymers Based on Dithieno[3,2-b:3′,2′-b]naphtho[1,2-b:5,6-b′]dithiophene: Synthesis and Semiconducting Properties

被引:26
作者
He, Mu [1 ,3 ]
Li, Weili [1 ]
Gao, Yao [1 ,3 ]
Tian, Honakun [1 ,3 ]
Zhang, Jidong [1 ]
Tong, Hui [1 ]
Yan, Donghang [1 ]
Geng, Yanhou [1 ,2 ,4 ]
Wang, Fosong [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[2] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; SOLAR-CELLS; MOLECULAR-PROPERTIES; COPOLYMERS; ISOINDIGO; BACKBONE; AMBIPOLAR; UNITS;
D O I
10.1021/acs.macromol.5b02583
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
A polycyclic aromatic unit comprising six rings, i.e., 5,11-bis(2-octyldodecyl)dithieno[3,2-b:3',2'-b']naphtho[1,2-b:5,6-b']dithiophene (DTNDT), was developed. Four donor-acceptor (D-A) conjugated polymers, which are named P-BT, P-2FBT, P-IID, and P-DPP, were synthesized with DTNDT as the D-unit and 2,1,3-benzothiadiazole (BT), 5,6-difluorobenzo[c][1,2,5]thiadiazole (2FBT), isoindigo (IID), and diketopyrrolopyrrole (DPP) as the A-unit, respectively. All four polymers are thermally stable with decomposition temperature above 390 degrees C and show pseudo-straight-shaped backbones. Their ordered thin films were prepared via solution spin-casting, in which conjugated backbones mainly adopted edge-on alignment on the substrate. The semiconducting properties of the polymers were characterized with bottom gate and top contact (BGTC) organic thin film transistors (OTFTs). All four polymers showed p-type transport behavior, and the hole mobilities were 0.023, 0.078, 0.50, and 1.80 cm(2)/(V s) for P-BT, P-2FBT, P-IID, and P-DPP, respectively. P-DPP exhibited the highest film order, a short pi-pi stacking distance (3.52 angstrom), and therefore the highest device mobility.
引用
收藏
页码:825 / 832
页数:8
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