Optical orientation and the Hanle effect of neutral and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells -: art. no. 153409

被引:47
作者
Dzhioev, RI
Korenev, VL
Zakharchenya, BP
Gammon, D
Bracker, AS
Tischler, JG
Katzer, DS
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1103/PhysRevB.66.153409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the optical orientation of negatively charged excitons (trions) in [001] GaAs/AlxGa1-xAs quantum wells (QW's). The spin orientation of equilibrium electrons reveals itself in the polarized luminescence of both excitons and trions. The Hanle effect of the trions differs substantially from that of the neutral excitons. It is found experimentally that the electron-spin-relaxation time in a 14-nm QW exceeds 10 ns at T=4.2 K.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 21 条
  • [1] Spin quantum beats of 2D excitons
    Amand, T
    Marie, X
    LeJeune, P
    Brousseau, M
    Robart, D
    Barrau, J
    Planel, R
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (07) : 1355 - 1358
  • [2] BIR GL, 1992, JETP LETT, V15, P516
  • [3] BIR GL, 1973, SOV PHYS JETP, V37, P116
  • [4] Coupled quantum dots as quantum gates
    Burkard, G
    Loss, D
    DiVincenzo, DP
    [J]. PHYSICAL REVIEW B, 1999, 59 (03): : 2070 - 2078
  • [5] Coherent spin dynamics of excitons in quantum wells
    Dyakonov, M
    Marie, X
    Amand, T
    LeJeune, P
    Robart, D
    Brousseau, M
    Barrau, J
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10412 - 10422
  • [6] Manipulation of the spin memory of electrons in n-GaAs -: art. no. 256801
    Dzhioev, RI
    Korenev, VL
    Merkulov, IA
    Zakharchenya, BP
    Gammon, D
    Efros, AL
    Katzer, DS
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (25) : 4 - 256801
  • [7] Long electron spin memory times in gallium arsenide
    Dzhioev, RI
    Zakharchenya, BP
    Korenev, VL
    Gammon, D
    Katzer, DS
    [J]. JETP LETTERS, 2001, 74 (03) : 182 - 185
  • [8] Spin diffusion of optically oriented electrons and photon entrainment in n-gallium arsenide
    Dzhioev, RI
    Zakharchenya, BP
    Korenev, VL
    Stepanova, MN
    [J]. PHYSICS OF THE SOLID STATE, 1997, 39 (11) : 1765 - 1768
  • [9] OPTICAL SPECTROSCOPY OF A 2-DIMENSIONAL ELECTRON-GAS NEAR THE METAL-INSULATOR-TRANSITION
    FINKELSTEIN, G
    SHTRIKMAN, H
    BARJOSEPH, I
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (06) : 976 - 979
  • [10] Optically detected magnetic resonance of excess electrons in type-I quantum wells with a low-density electron gas
    Hu, CY
    Ossau, W
    Yakovlev, DR
    Landwehr, G
    Wojtowicz, T
    Karczewski, G
    Kossut, J
    [J]. PHYSICAL REVIEW B, 1998, 58 (04): : R1766 - R1769