Trap-limited transport in rubrene transistors

被引：12

作者：

Konezny, S. J. ^{[1
]}

Bussac, M. N. ^{[1
,2
]}

Zuppiroli, L. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Optoelect Mat Mol, STI IMX LOMM, Stn 3, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech, Ctr Phys Theor, UMR 7644, Ctr Natl Rech Sci, F-91128 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

基金：

瑞士国家科学基金会;

关键词：

carrier mobility; defect states; effective mass; organic field effect transistors; organic semiconductors; permittivity; semiconductor-insulator boundaries; DIPOLE-MOMENT; CRYSTAL; ANTHRACENE;

D O I：

10.1063/1.3276693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge carrier mobility in the transport channel of an organic transistor is estimated within the framework of a trap-and-release model. The model accounts for the observed dependence of the mobility on the dielectric constant epsilon of the gate insulator. This dependence is attributed to both the effective mass of the carrier and the energetic depth of transport traps due to interface defects being functions of epsilon. These results are used to describe the critical role of the interface between the organic semiconductor and the dielectric material in governing charge transport in organic transistors.

引用

页数：3

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