Near-IR Optical Upconverter With Integrated Heterojunction Phototransistor and Organic Light-Emitting Diode

被引：12

作者：

Chen, Jun ^{[1
]}

Ban, Dayan ^{[1
]}

Helander, Michael G. ^{[2
]}

Lu, Zhenghong ^{[2
]}

Graf, Marcel ^{[1
,3
]}

Poole, Philip ^{[3
]}

Liu, H. C. ^{[3
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[2] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

[3] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 19期

关键词：

Infrared (IR) detectors; optical frequency conversion; optoelectronic devices; organic light-emitting diodes (OLEDs);

D O I：

10.1109/LPT.2009.2028241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a near-infrared (NIR) optical upconverter consisting of an integrated InGaAs-InP heterojunction phototransistor (HPT) with an organic light-emitting diode (OLED), which converts 1.5-mu m IR light to visible light with a built-in electrical gain. The device was fabricated through direct tandem integration of an OLED with an inorganic InGaAs-InP HPT. Incoming 1.5-mu m optical radiation is absorbed by the HPT, generating an amplified photocurrent. The resultant photocurrent drives the OLED that emits at 545 nm. Upconversion is demonstrated at room temperature with a gain of 15 from the HPT and an overall external upconversion efficiency of 0.15 W/W.

引用

页码：1447 / 1449

页数：3

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