This research aims to study the influence of variation of doping concentration on various properties of Ce3+ doped Gd2O3 phosphor. The phosphors (Gd1-xCex)(2)O-3 (0 <= x <= 0.15) were successfully synthesized by the solution combustion method. The structural and optical properties of the prepared phosphors were studied. Rietveld refinement confirms the formation of the cubic phase. Fourier transform infrared spectra further confirm the formation of the phosphor. It is found that an enhancement in doping concentration of Ce3+ results in the expansion of the crystal lattice, leading to a reduction in crystallite size as well as in the optical band gap. Photoluminescence emission spectra are studied, and the exact emission colour is confirmed using 1931 Commission Internationale de l'Eclairage (CIE) chromaticity coordinates. The prepared phosphor exhibits bluish green emission corresponding to 5d-4f transitions of the trivalent cerium ion and can be used as a promising candidate in optical display applications and LED applications.
机构:
Abasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, IndiaAbasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, India
Rathod, Sopan M.
Deonikar, Virendrakumar G.
论文数: 0引用数: 0
h-index: 0
机构:
Abasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, IndiaAbasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, India
Deonikar, Virendrakumar G.
Mirage, Pooja P.
论文数: 0引用数: 0
h-index: 0
机构:
Abasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, IndiaAbasaheb Garware Coll, Dept Phys, Nano Mat & Lasers Res Lab, Karve Rd, Pune 411004, Maharashtra, India
机构:
Univ Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, MalaysiaUniv Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, Malaysia
Sazali, E. S.
Sahar, M. R.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, MalaysiaUniv Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, Malaysia
Sahar, M. R.
Ghoshal, S. K.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, MalaysiaUniv Teknol Malaysia, Dept Phys, Adv Opt Mat Res Grp, Fac Sci, Johor Baharu 81310, Johor, Malaysia
Ghoshal, S. K.
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS,
2014,
7
(01):
: 1
-
7