Comment on "Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

被引：1
|
作者：
Yang, Zhenyu
Wang, Jingli
Liao, Lei [1 ]
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
来源：
ACS NANO | 2016年 / 10卷 / 02期
关键词：
MOS2; MONOLAYER;
D O I：
10.1021/acsnano.5b07083
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1714 / 1715
页数：2
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