Atomic-scale study of diffusion in A15 Nb3Sn

被引:38
作者
Besson, Remy [1 ]
Guyot, Sylvain [1 ]
Legris, Alexandre [1 ]
机构
[1] Univ Sci & Tech Lille Flandres Artois, CNRS, Lab Met Phys & Genie Mat, UMR 8517, F-59655 Villeneuve Dascq, France
关键词
D O I
10.1103/PhysRevB.75.054105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The point defect and diffusion properties of A15 Nb3Sn are investigated using ab initio density functional theory calculations and statistical thermodynamics. The defect structure is found to be of antisite type, with small amounts of Nb vacancies, and Sn vacancies showing a trend towards instability. Diffusion occurs mainly on the Nb-sublattice (restricted to intrachain jumps for both species), Sn-sublattice exchanges being unlikely for both species. In addition, ordering (disordering) is found to occur via Sn (Nb) jumps. The calculated Nb and Sn tracer diffusion coefficients exhibit a low sensitivity to the alloy composition around stoichiometry at 1000 K, with D-Nb(*)> D-Sn(*) provided the correlation between atomic jumps is taken into account. Agreement with interdiffusion measurements is reached with reasonably low values for the geometrical correlation factor.
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页数:7
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