Gas-source molecular beam epitaxy of III-V nitrides

Amorphous, hexagonal and cubic phases of BN were grown via ion beam assisted deposition on Si(100) substrates. Gas-source molecular beam epitaxy of the III-V nitrides is reviewed. Sapphire(0001) is the most commonly employed substrate with 6H-SiC(0001), ZnO(111) and Si(111) also being used primarily for the growth of wurtzite GaN(0001) in tandem with previously deposited GaN(0001) or AlN(0001) buffer layers. Silicon(001), GaAs(001), GaP(001) and 3C-SiC(001) have been employed for growth of cubic (zincblende) beta-GaN(001). The precursor materials are evaporated metals and reactive N species produced either via ECR or RF plasma decomposition of N-2 or from ammonia. However, point defect damage from the plasma-derived species has resulted in a steady increase in the number of investigators now using ammonia. The growth temperatures for wurtzite GaN have increased from 650 +/- 50 degrees C to 800 +/- 50 degrees C to enhance the surface mobility of the reactants and, in turn, the efficiency of decomposition of ammonia and the microstructure and the growth rate of the films. Doping has been achieved primarily with Si (donor) and Mg (acceptor); the latter has been activated without post-growth annealing. Simple heterostructures, a p-n junction LED and a modulation-doped field-effect transistor have been achieved using GSMBE-grown material.