Electric field tunable anisotropic magnetoresistance effect in an epitaxial Co2FeSi/BaTiO3 interfacial multiferroic system

被引：16

作者：

Yamada, S. ^{[1
,2
]}

Teramoto, Y. ^{[2
]}

Matsumi, D. ^{[2
]}

Kepaptsoglou, D. ^{[3
,4
]}

Azaceta, I ^{[4
]}

Murata, T. ^{[2
]}

Kudo, K. ^{[2
]}

Lazarov, V. K. ^{[4
]}

Taniyama, T. ^{[1
,5
]}

Hamaya, K. ^{[1
,2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Toyonaka, Osaka 5608531, Japan

[3] SuperSTEM Lab, Daresbury WA4 4AD, England

[4] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[5] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan

来源：

PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

MAGNETIC-ANISOTROPY; FERROMAGNETISM;

D O I：

10.1103/PhysRevMaterials.5.014412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic system consisting of a ferromagnetic Heusler-alloy Co2FeSi and a ferroelectric-oxide BaTiO3. L2(1)-ordered Co2FeSi epilayers on BaTiO3 (001) show an in-plane uniaxial magnetic anisotropy with strong temperature dependence, induced by the presence of the magnetoelastic effect via the spin-orbit interaction at the Co2FeSi/BaTiO3 (001) interface. In the Co2FeSi Hall-bar devices, the anisotropic magnetoresistance (AMR) hysteretic curves depending on inplane magnetization reversal processes on the a and c domains of BaTiO3 (001) are clearly observed at room temperature. Notably, the magnitude of the AMR ratio (%) for Co2FeSi Hall-bar devices can be tuned through the a - c domain wall motion of BaTiO3 (001) by applying electric fields. We propose that the tunable AMR effect is associated with the modulation of the spin-orbit interaction, exchange interaction, and/or the electronic band structure near the Fermi level by applying electric fields in the epitaxial Co2FeSi/BaTiO3 (001) interfacial multiferroic system.

引用

页数：9