Detecting Resistive-Open Defects of TSVs in Power Distribution Network of 3D-IC

被引：0

作者：

Hachiya, Koutaro ^{[1
]}

Kurokawa, Atshushi ^{[2
]}

机构：

[1] Teikyo Heisei Univ, Fac Modern Life, Tokyo, Japan

[2] Hirosaki Univ, Grad Sch Sci & Technol, Hirosaki, Aomori, Japan

来源：

24TH IEEE WORKSHOP ON SIGNAL AND POWER INTEGRITY (SPI 2020) | 2020年

关键词：

resistive open; through silicon via; power distribution network; three dimensional integrated circuit;

D O I：

10.1109/spi48784.2020.9218143

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method is proposed which detects resistive-open defects of power TSVs in power distribution networks by measuring resistance between power micro-bumps. Utilizing the monotonically increasing property of the measured resistance when the resistance of TSV under test increases, the method defines the minimum defective resistance R-min of TSVs and uses it as the resistance of defective TSV in statistical fault simulations. Simulation results of a 3D-IC example with two dies show that the proposed method can detect resistive-open defects although defect coverage is decreased when R-min is decreased.

引用

页数：4

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