Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

被引：30

作者：

Pooth, Alexander ^{[1
,2
]}

Uren, Michael J. ^{[1
]}

Caesar, Markus ^{[1
]}

Martin, Trevor ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Tyndall Ave, Bristol BS8 1TL, Avon, England

[2] IQE Europe Ltd, Cardiff CF3 0LW, S Glam, Wales

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 21期

基金：

“创新英国”项目; 英国工程与自然科学研究理事会;

关键词：

ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN; HEMTS;

D O I：

10.1063/1.4936780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge trapping and transport in the carbon doped GaN buffer of a GaN-based hetero-structure field effect transistor (HFET) has been investigated under both positive and negative substrate bias. Clear evidence of redistribution of charges in the carbon doped region by thermally generated holes is seen, with electron injection and capture observed during positive bias. Excellent agreement is found with simulations. It is shown that these effects are intrinsic to the carbon doped GaN and need to be controlled to provide reliable and efficient GaN-based power HFETs. (C) 2015 AIP Publishing LLC.

引用

页数：4

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