Transport properties of single-crystal CdS nanoribbons

被引：50
作者：
Jie, J. S.
Zhang, W. J. [1 ]
Jiang, Y.
Lee, S. T.
机构：
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期
关键词：
D O I：
10.1063/1.2398891
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transport properties of single-crystal CdS nanoribbons were studied by evaluating the characteristics of field-effect transistors made of individual CdS nanoribbons. The nanoribbon transistors exhibited typical normally off n-channel characteristics with an on-off ratio as high as 10(4) in dark and in air. A barrier of 0.55 eV at the metal-semiconductor contact was deduced from the temperature-dependent conductance. The CdS nanoribbons were highly sensitive to visible light and to adsorbed oxygen molecules. The transistor showed substantial improvement in performance under light irradiation and in vacuum.
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