Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer

被引：6
作者：
Sun, Yunju [1 ]
Eastman, L. F. [1 ]
机构：
[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 06期
关键词：
HETEROSTRUCTURE; LAYER; GAN;
D O I：
10.1116/1.2395964
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-resistance Ohmic contact on undoped GaN/AlGaN/AlN (10 angstrom)/GaN high electron mobility transistors is first demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme. A contact resistance of 0.16 +/- 0.03 Omega mm is achieved by rapid thermal annealing of the evaporated contact at 700 degrees C for 1 min followed by 800 degrees C for 30 s in a N-2 ambient. Excellent edge acuity is also demonstrated for this annealed Ta/Ti/Al/Mo/Au Ohmic contact. (c) 2006 American Vacuum Society.
引用
收藏
页码：2723 / 2725
页数：3
相关论文
共 50 条
  • [41] Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors
    Baron, N.
    Leroux, M.
    Zeggaoui, N.
    Corfdir, P.
    Semond, F.
    Bougrioua, Z.
    Azize, M.
    Cordier, Y.
    Massies, J.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S715 - S718
  • [42] Thermal Storage of AlGaN/GaN High-Electron-Mobility Transistors
    Zhao, Miao
    Wang, Xinhua
    Liu, Xinyu
    Huang, Jun
    Zheng, Yingkui
    Wei, Ke
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (03) : 360 - 365
  • [43] Current relaxation analysis in AlGaN/GaN high electron mobility transistors
    Polyakov, Alexander Y.
    Smirnov, N. B.
    Shchemerov, Ivan V.
    Lee, In-Hwan
    Jang, Taehoon
    Dorofeev, Alexey A.
    Gladysheva, Nadezhda B.
    Kondratyev, Eugene S.
    Turusova, Yulia A.
    Zinovyev, Roman A.
    Turutin, A. V.
    Ren, Fan
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (01):
  • [44] Enhancement-mode AlGaN/AlN/GaN high electron mobility transistor with low on-state resistance and high breakdown voltage
    Ohmaki, Yuji
    Tanimoto, Masashi
    Akamatsu, Shiro
    Mukai, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (42-45): : L1168 - L1170
  • [45] Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors
    Mosbahi, H.
    Gassoumi, M.
    Bchetnia, A.
    Zaidi, M. A.
    SILICON, 2022, 14 (13) : 7417 - 7422
  • [46] Temperature Estimation of High-Electron Mobility Transistors AlGaN/GaN
    Latry, Olivier
    Joubert, Eric
    Neveu, Tristan
    Moultif, Niemat
    Ndiaye, Mohamed
    2018 19TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (IEEE MELECON'18), 2018, : 265 - 268
  • [47] Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
    Andrade, Maria Gloria Cano de
    Bergamim, Luis Felipe de Oliveira
    Baptista Junior, Braz
    Nogueira, Carlos Roberto
    da Silva, Fabio Alex
    Takakura, Kenichiro
    Parvais, Bertrand
    Simoen, Eddy
    SOLID-STATE ELECTRONICS, 2021, 183
  • [48] Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
    Mosbahi, H.
    Gassoumi, M.
    Guesmi, A.
    Bchetnia, A.
    Zaidi, M. A.
    JOURNAL OF OVONIC RESEARCH, 2022, 18 (02): : 159 - 165
  • [49] Thermal effects in AlGaN/GaN/Si high electron mobility transistors
    Saidi, I.
    Cordier, Y.
    Chmielowska, M.
    Mejri, H.
    Maaref, H.
    SOLID-STATE ELECTRONICS, 2011, 61 (01) : 1 - 6
  • [50] Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation
    Pang, Liang
    Seo, Hui-Chan
    Chapman, Patrick
    Adesida, Ilesanmi
    Kim, Kyekyoon
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (05) : 499 - 503
12345