Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer

被引：6
|
作者：
Sun, Yunju [1 ]
Eastman, L. F. [1 ]
机构：
[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 06期
关键词：
HETEROSTRUCTURE; LAYER; GAN;
D O I：
10.1116/1.2395964
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-resistance Ohmic contact on undoped GaN/AlGaN/AlN (10 angstrom)/GaN high electron mobility transistors is first demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme. A contact resistance of 0.16 +/- 0.03 Omega mm is achieved by rapid thermal annealing of the evaporated contact at 700 degrees C for 1 min followed by 800 degrees C for 30 s in a N-2 ambient. Excellent edge acuity is also demonstrated for this annealed Ta/Ti/Al/Mo/Au Ohmic contact. (c) 2006 American Vacuum Society.
引用
收藏
页码：2723 / 2725
页数：3
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