Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer

被引：6
|
作者：
Sun, Yunju [1 ]
Eastman, L. F. [1 ]
机构：
[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 06期
关键词：
HETEROSTRUCTURE; LAYER; GAN;
D O I：
10.1116/1.2395964
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-resistance Ohmic contact on undoped GaN/AlGaN/AlN (10 angstrom)/GaN high electron mobility transistors is first demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme. A contact resistance of 0.16 +/- 0.03 Omega mm is achieved by rapid thermal annealing of the evaporated contact at 700 degrees C for 1 min followed by 800 degrees C for 30 s in a N-2 ambient. Excellent edge acuity is also demonstrated for this annealed Ta/Ti/Al/Mo/Au Ohmic contact. (c) 2006 American Vacuum Society.
引用
收藏
页码：2723 / 2725
页数：3
相关论文
共 50 条
  • [1] Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors
    Wang, Liang
    Mohammed, Fitih M.
    Ofuonye, Benedict
    Adesida, Ilesanmi
    APPLIED PHYSICS LETTERS, 2007, 91 (01)
  • [2] AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
    Wang, H. T.
    Tan, L. S.
    Chor, E. F.
    THIN SOLID FILMS, 2007, 515 (10) : 4476 - 4479
  • [3] Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors
    Fitch, RC
    Gillespie, JK
    Moser, N
    Jenkins, T
    Sewell, J
    Via, D
    Crespo, A
    Dabiran, AM
    Chow, PP
    Osinsky, A
    La Roche, JR
    Ren, F
    Pearton, SJ
    APPLIED PHYSICS LETTERS, 2004, 84 (09) : 1495 - 1497
  • [4] Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
    Pavlov A.Y.
    Pavlov V.Y.
    Slapovskiy D.N.
    Arutyunyan S.S.
    Fedorov Y.V.
    Mal’tsev P.P.
    Russian Microelectronics, 2017, 46 (5) : 316 - 322
  • [5] Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors
    Wong, Yuen-Yee
    Chen, Yu-Kong
    Maa, Jer-Shen
    Yu, Hung-Wei
    Tu, Yung-Yi
    Dee, Chang-Fu
    Yap, Chi-Chin
    Chang, Edward Yi
    APPLIED PHYSICS LETTERS, 2013, 103 (15)
  • [6] Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
    Fujishima, Tatsuya
    Joglekar, Sameer
    Piedra, Daniel
    Lee, Hyung-Seok
    Zhang, Yuhao
    Uedono, Akira
    Palacios, Tomas
    APPLIED PHYSICS LETTERS, 2013, 103 (08)
  • [7] Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors
    Fitch, RC
    Gillespie, JK
    Moser, N
    Jessen, G
    Jenkins, T
    Dettmer, R
    Via, D
    Crespo, A
    Dabiran, AM
    Chow, PP
    Osinsky, A
    La Roche, JR
    Ren, F
    Pearton, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 619 - 623
  • [8] Low-resistance ohmic contacts to digital alloys of n-AlGaN/AlN
    Yun, J
    Choi, K
    Mathur, K
    Kuryatkov, V
    Borisov, B
    Kipshidze, G
    Nikishin, S
    Temkin, H
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (01) : 22 - 24
  • [9] Low ohmic-contact resistance in AlGaN/GaN high electron mobility transistors with holes etching in ohmic region
    Wang, Chong
    He, Yunlong
    Zheng, Xuefeng
    Zhao, Mengdi
    Mi, Minhan
    Li, Xiangdong
    Mao, Wei
    Ma, Xiaohua
    Hao, Yue
    ELECTRONICS LETTERS, 2015, 51 (25) : 2146 - 2147
  • [10] Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
    Nidhi
    Brown, David F.
    Keller, Stacia
    Mishra, Umesh K.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (02)
12345