Development of microfabricated planar slow-wave structures on dielectric substrates for miniaturized millimeter-band traveling-wave tubes

被引：19

作者：

Ryskin, Nikita M. ^{[1
,2
]}

Torgashov, Roman A. ^{[1
,2
]}

Starodubov, Andrey V. ^{[1
,2
]}

Rozhnev, Andrey G. ^{[1
,2
]}

Serdobintsev, Alexey A. ^{[2
]}

Pavlov, Anton M. ^{[2
]}

Galushka, Viktor V. ^{[1
,2
]}

Bessonov, Dmitry A. ^{[3
]}

Ulisse, Giacomo ^{[4
]}

Krozer, Viktor ^{[4
]}

机构：

[1] RAS, Kotelnikov Inst Radio Engn & Elect, Saratov Branch, 38 Zelenaya St, Saratov 410012, Russia

[2] Saratov NG Chernyshevskii State Univ, 83 Astrakhanskaya St, Saratov 410019, Russia

[3] Saratov State Tech Univ, 77 Politekh Skaya St, Saratov 410077, Russia

[4] Goethe Univ Frankfurt Main, Phys Inst, 1 Max von Lauestr St, D-60438 Frankfurt, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2021年 / 39卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1116/6.0000716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the results of the design, simulation, fabrication, and cold-test measurements of millimeter-band 2D planar microstrip slow-wave structures (SWSs) on dielectric substrates. Such structures have a high slow-wave factor, which allows for low-voltage operation and reduction in the size and weight of the device. A low-cost and flexible fabrication technology based on magnetron sputtering and subsequent laser ablation has been developed and is reported in the paper. Microstrip meander-line SWS circuits at V-, W-, and D-bands have been fabricated and characterized. The fabrication of ring-bar planar SWSs by the photolithographic method is also discussed. Experimental measurement of S-parameters of the fabricated structures reveals good transmission properties. Return loss (S11) does not exceed -10dB and attenuation is about 2dB/cm in the V-band, 10dB/cm in the W-band, and 8.5dB/cm in the D-band.

引用

页数：10

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