Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge)/Ahuninitun Oxide (Al2O3)

被引：4

作者：

Sahari, Siti Kudnie ^{[1
]}

Fathi, Nik Amni Fathi Nik Zaini ^{[1
]}

Hamzah, Azrul Azlan ^{[2
]}

Sutan, Norsuzailina Mohamed ^{[1
]}

Embong, Zaidi ^{[3
]}

Sultan, Suhana Mohamed ^{[4
]}

Kashif, Muhammad ^{[1
]}

Sawawi, Marini ^{[1
]}

Hasanah, Lilik ^{[5
]}

Sapawi, Rohana ^{[1
]}

Kipli, Kuryati ^{[1
]}

Kram, Abdul Rahman ^{[1
]}

Junaidi, Nazreen ^{[1
]}

机构：

[1] Univ Malaysia Sarawak, Fac Engn, Kota Samarahan 94300, Sarawak, Malaysia

[2] Univ Kebangsaan Malaysia, Inst MicroEngn & Nanotechnol, Ukm Bangi 43600, Selangor Darul, Malaysia

[3] Univ Tun Hussein Onn Malaysia, Fac Sci Technol & Human Dev, Batu Pahat 86400, Johor Darul Tak, Malaysia

[4] Univ Teknol Malaysia, Dept Elect & Comp Engn, Johor Baharu 81310, Johor Darul Tak, Malaysia

[5] Univ Pendidikan Indonesia, Jl Dr Setiabudhi 229, Bandung, Indonesia

来源：

SAINS MALAYSIANA | 2019年 / 48卷 / 06期

关键词：

Al2O3; germanium; interfacial layer; post deposition anneal; OXIDATION; FILMS; MOS; GE;

D O I：

10.17576/jsm-2019-4806-06

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work; the effects of post deposition anneal (PDA) temperature between 400 degrees C and 600 degrees C on the chemical composition of interfacial layer between Ge and Al2O3 were examined by X-ray photoelectron spectroscopy (xPs). Investigation on thermal stability and structural characteristics for gate structure of Al2O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (xPs) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2O3 interface at higher temperature of 600 degrees C.

引用

页码：1195 / 1199

页数：5

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