The electrical characterization of Zn(Phen)q/p-type Si/Al diode with interfacial layer by current-voltage characteristics

被引：37

作者：

Yakuphanoglu, Fahrettin ^{[1
]}

Lee, Burm-Jong

机构：

[1] Firat Univ, Dept Phys, TR-23169 Elazig, Turkey

[2] Inje Univ, Dept Chem, Kimhae 621749, South Korea

[3] Inje Univ, BPRC, Kimhae 621749, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 390卷 / 1-2期

关键词：

Schottky diode; interfacial state density; series resistance;

D O I：

10.1016/j.physb.2006.08.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current-voltage characteristics of Zinc (II) [(8-hydroxyquinoline)(1,10-phenanthroline)] complex (Zn(phen)q)/p-type Si/Al diode with interfacial layer have been investigated. The barrier height and ideality factor of the diode were found to be 0.71 eV and 2.05. Zn(phen)q/p-type Si/Al diode shows a metal-insulator-semiconductor structure resulted from presence of series resistance and an interfacial layer. The n and OB values obtained the presence of interfacial layer are 1.02 and 0.70eV, respectively. The effect of series resistance was evaluated using a method developed by Cheung. The R-s and n values were determined from the d ln(I)/dV plot and were found to be 30.43 k Omega and 2.16, respectively. The barrier height and R-s values were calculated from the H(I)-I plot and were found to be 0.70 eV and 30.99 Omega. The density of the interface states of the Zn(phen)q/p-type Si/Al diode was calculated and was found to be an order of 10(13) eV(-1) cm(-2). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：151 / 154

页数：4

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