Carrier transport and density of state distributions in pentacene transistors -: art. no. 195336

被引：239

作者：

Völkel, AR ^{[1
]}

Street, RA ^{[1
]}

Knipp, D ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.66.195336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a density of state model for the transport properties of pentacene field effect transistors. Using a one-dimensional transistor model we study the effect of different localized trap distributions on the current-voltage characteristics of such devices. We find that a distributed trap model with a steep exponential band tail of donors and a shallower exponential tail of acceptors inside the band gap can describe consistently our experimental data obtained from bottom-gate polycrystalline pentacene transistors for different gate dielectrics and under various external conditions.

引用

页码：1953361 / 1953368

页数：8

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