Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

被引：85

作者：

Marso, M ^{[1
]}

Wolter, M ^{[1
]}

Javorka, P ^{[1
]}

Kordos, P ^{[1
]}

Lüth, H ^{[1
]}

机构：

[1] Res Ctr, Inst Thin Films & Interfaces, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 04期

关键词：

D O I：

10.1063/1.1540239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a substrate voltage on the dc characteristics of an AlGaN/GaN high electron mobility transistor (HEMT) on silicon (111) substrate is profited to investigate traps that are located between the substrate and the two-dimensional electron gas channel. The transient of the drain current after applying a negative substrate voltage is evaluated in the temperature range from 30 to 100 degreesC. With this method, known as backgating current deep level transient spectroscopy, majority carrier traps with activation energy of 200 meV as well as minority carrier traps at 370 meV are identified. The experiments are performed on completed HEMTs, allowing the investigation of the influence of device fabrication technology. (C) 2003 American Institute of Physics.

引用

页码：633 / 635

页数：3

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