Temperature-composition dependence of the bandgap and possible non-complanar structures in GaN-AlN, GaN-InN and InN-AlN mixed crystals

被引：0

作者：

Kalashnikov, EV ^{[1
]}

Nikolaev, VI ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST, ST PETERSBURG, RUSSIA

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1997年 / 2卷 / 1-5期

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D O I：

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中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The virtual crystal approximation has been used to determine the temperature-composition dependence of the GaN-AlN, GaN-InN, and InN-AlN band gap energies. Also, the thermodynamic instability states in:he mixed crystals were studied, The expression for the band gap of mixed A-B crystals has been derived: E-g(AB)=(1-x)E-g(A)+xE(g)(B)-bS(xx), where E-g(A) and E-g(B) are the direct gaps for compounds A and B, respectively, and x is the alloy concentration. The term S(xx)similar to T-0/partial derivative(2)G/partial derivative x(2)) where G is the thermodynamic potential of the mixed crystal, b is a bowing parameter, and T-0 has the meaning of a growth temperature.

引用

页数：9