A study of the rectifying behaviour of aniline green-based Schottky diode

被引：9

作者：

Aydogan, S. ^{[1
]}

Gullu, O. ^{[2
]}

机构：

[1] Ataturk Univ, Dept Phys, Fac Sci & Arts, TR-25240 Erzurum, Turkey

[2] Batman Univ, Dept Phys, Fac Sci & Arts, Batman, Turkey

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 02期

关键词：

Schottky barrier; Ideality factor; Organic semiconductor; Aniline green; CAPACITANCE-VOLTAGE CHARACTERISTICS; FREQUENCY-DEPENDENCE; HETEROSTRUCTURE DIODES; INTERFACE STATES; CONTACTS; GA2TE3;

D O I：

10.1016/j.mee.2009.07.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al/aniline green (AG)/Ga2Te3 device was fabricated and the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current-voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C-f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga2Te3 that can follow the ac signal. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：187 / 191

页数：5

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