Effect of B2O3 on the microstructure and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

被引:2
|
作者
Peng, Sen [1 ,2 ]
Yao, Wenxiang [1 ]
Zeng, Wenfei [1 ]
Xu, Jianming [1 ]
机构
[1] Shaoyang Univ, Prov Key Lab Informat Serv Rural Area Southwester, Shaoyang 422000, Peoples R China
[2] Hunan Univ, Coll Elect & Informat Engn, Changsha 410082, Hunan, Peoples R China
关键词
CRYSTAL-STRUCTURE; SUBSTITUTION; PHASE; RAMAN;
D O I
10.1007/s10854-021-05770-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influences of different doping contents of additive B2O3 on the sintering behavior, microstructure and microwave properties of Ba(Mg1/3Nb2/3)O-3 (BMN) microwave ceramics were studied. The main phase in the sintered ceramics was crystallized as Ba(Mg1/3Nb2/3)O-3 (BMN). Ba2B2O5 as the secondary phase was observed with x >= 10. Scanning electron microscopy (SEM) analysis revealed that the photograph of optimally nonstoichiometric ceramics sintered at 900 degrees C for 5 h displayed a dense microstructure. The dielectric properties and microstructures of BMN ceramics were very sensitive to the nonstoichiometry. The addition of B2O3 had a positive influence on the Q x f value, for example the sample with x = 7 showed the highest Q x f value of 89,800 GHz. Finally, excellent microwave dielectric properties (epsilon(r) = 31.6, Q x f = 89,800 GHz and tau(f) = 3.6 ppm/degrees C) were achieved for the sample with x = 7 sintered at 900 degrees C for 5 h.
引用
收藏
页码:11084 / 11091
页数:8
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